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Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography [6283-123]

著者名:
Yoshizawa, M. ( Sony Corp. (Japan) and IMEC (Belgium) )
Philipsen, V.
Leunissen, A. H. L.
Hendrickx, E.
Jonckheere, R.
Vandenberghe, G. ( IMEC (Belgium) )
Buttgereit, U.
Becker, H. ( Schott Lithotec AG (Germany) )
Koepernik, C.
Irmscher, M. ( Institut fur Mikroelektronik Stuttgart (Germany) )
さらに 5 件
掲載資料名:
Photomask and Next-Generation Lithography Mask Technology XIII
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6283
発行年:
2006
パート:
1
開始ページ:
62831G
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819463586 [0819463582]
言語:
英語
請求記号:
P63600/6283
資料種別:
国際会議録

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1 国際会議録 Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA Iithogra phy [6154-51]

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3 国際会議録 Extended process window using variable transmission PSM materials for 65 nm and 45 nm node [6283-120]

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