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Development of multi-function hard mask to simplify process step [6153-108]

著者名:
Lee, K. ( Hynix Semiconductor Inc. (South Korea) )
Kim, S. ( Hynix Semiconductor Inc. (South Korea) )
Lee, G. ( Hynix Semiconductor Inc. (South Korea) )
Lee, S. ( Hynix Semiconductor Inc. (South Korea) )
Cho J ( Hynix Semiconductor Inc. (South Korea) )
Kim W ( Hynix Semiconductor Inc. (South Korea) )
Bok C ( Hynix Semiconductor Inc. (South Korea) )
Kim H ( Hynix Semiconductor Inc. (South Korea) )
Moon S ( Hynix Semiconductor Inc. (South Korea) )
Kim J ( Hynix Semiconductor Inc. (South Korea) )
さらに 5 件
掲載資料名:
Advances in Resist Technology and Processing XXIII
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6153
発行年:
2006
パート:
2
開始ページ:
61532V
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461964 [0819461962]
言語:
英語
請求記号:
P63600/6153
資料種別:
国際会議録

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1 国際会議録 Optimization of material and process parameter for minimizing defect in implementation of MFHM process

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7 国際会議録 Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist

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2 国際会議録 Double exposure technology using silicon containing materials [6153-57]

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8 国際会議録 Mask topography effect on OPC at hyper NA lithography [6154-64]

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3 国際会議録 Resolution enhanced top anti-reflective coating materials for ArF immersion lithography [6153-74]

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9 国際会議録 Simulation and experiments for inspection properties of EUV mask defects [6283-85]

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4 国際会議録 Spin-on hard mask with dual-BARC property for 50-nm devices [6153-21]

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10 国際会議録 Statistical analysis of CD-SEM measurement and process control in the indistinguishable multi-process patterns [6152-100]

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5 国際会議録 OPC to account for thick mask effect using simplified boundary layer model [6349-133]

Kim, S., Kim, Y.-C., Suh, S., Lee, S., Cho, H., Moon, J., Cobb, J.

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11 国際会議録 Overlay metrology for dark hard mask process: simulation and experiment study

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6 国際会議録 Polymer structure modifications for immersion leaching and watermark control [6153-77]

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12 国際会議録 Organosiloxane based bottom antireflective coatings for 193nm lithography

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