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GaAs-based 1.3 um quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer [6129-10]

著者名:
Kim, K W ( Korea Institute of Science and Technology (South Korea) and Korea Univ. (South Korea) )
Cho, N K ( Korea Institute of Science and Technology (South Korea) )
Ryu, S. P. ( Korea Institute of Science and Technology (South Korea) )
Song, J. D. ( Korea Institute of Science and Technology (South Korea) )
Choi, W. J. ( Korea Institute of Science and Technology (South Korea) )
Lee, J I ( Korea Institute of Science and Technology (South Korea) )
Park, J. H. ( Korea Univ. (South Korea) )
さらに 2 件
掲載資料名:
Quantum Dots, Particles, and Nanoclusters III
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6129
発行年:
2006
開始ページ:
612909
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461711 [0819461717]
言語:
英語
請求記号:
P63600/6129
資料種別:
国際会議録

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