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Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes [6121-35]

著者名:
Chae J. H ( SAMSUNG Advanced Institute of Technology (South Korea) )
Ryu H-Y ( SAMSUNG Advanced Institute of Technology (South Korea) )
Kim K-S ( SAMSUNG Advanced Institute of Technology (South Korea) )
Ha K-H ( SAMSUNG Advanced Institute of Technology (South Korea) )
Chae S ( SAMSUNG Advanced Institute of Technology (South Korea) )
Kim H ( SAMSUNG Advanced Institute of Technology (South Korea) )
Lee S-N ( SAMSUNG Advanced Institute of Technology (South Korea) )
Choi T ( SAMSUNG Advanced Institute of Technology (South Korea) )
Jang T ( SAMSUNG Advanced Institute of Technology (South Korea) )
Son J K ( SAMSUNG Advanced Institute of Technology (South Korea) )
Baek H S ( SAMSUNG Advanced Institute of Technology (South Korea) )
Sung Y J ( SAMSUNG Advanced Institute of Technology (South Korea) )
Tan S ( SAMSUNG Advanced Institute of Technology (South Korea) )
Kim Y ( SAMSUNG Advanced Institute of Technology (South Korea) )
Nam OH ( SAMSUNG Advanced Institute of Technology (South Korea) )
Park Y J ( SAMSUNG Advanced Institute of Technology (South Korea) )
さらに 11 件
掲載資料名:
Gallium Nitride Materials and Devices
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6121
発行年:
2006
開始ページ:
61210Y
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
言語:
英語
請求記号:
P63600/6121
資料種別:
国際会議録

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