Growth and characterization of AIGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications (Invited Paper) [6121-13]
- 著者名:
Sood, A. K. ( Magnolia Optical Technologies, Inc. (USA) ) Singh, R. ( Magnolia Optical Technologies, Inc. (USA) ) Puri, Y. R. ( Magnolia Optical Technologies, Inc. (USA) ) Clarke, F. W. ( U.S. Army Space and Missile Defense Command (USA) ) Laboutin, O. ( Kopin Corp. (USA) ) Deluca, P. M. ( Kopin Corp. (USA) ) Wesler, R. E. ( Kopin Corp. (USA) ) Deng, J. ( Lehigh Univ. (USA) ) Hwang, J. C. M. ( Lehigh Univ. (USA) ) - 掲載資料名:
- Gallium Nitride Materials and Devices
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6121
- 発行年:
- 2006
- 開始ページ:
- 61210D
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461636 [0819461636]
- 言語:
- 英語
- 請求記号:
- P63600/6121
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
2
国際会議録
Design and Development of MBE Grown AlGaN/GaN REMT Devices on SiC Substrates for RF Applications
Materials Research Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
5
国際会議録
Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
国際会議録
GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
Trans Tech Publications |