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Quantum-structure dependent excitonic carrier dynamics of InxGal-xN/GaN multi-quantum-wells (Invited Paper) [6121-04]

著者名:
Hong, S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, Y. S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Yoon, Y.J. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Park, J.S. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, B. K. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Fomin, A. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Lee, G. H. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Kim, J.W. ( Samsung Electro-Mechanics Co ., Ltd. (South Korea) )
Cho, H.K. ( Sungkyunkwan Univ. (South Korea) )
Joo, T. ( Pohang Univ of Science and Technology (South Korea) )
さらに 5 件
掲載資料名:
Gallium Nitride Materials and Devices
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6121
発行年:
2006
開始ページ:
612105
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
言語:
英語
請求記号:
P63600/6121
資料種別:
国際会議録

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