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Effects of growth interruption time on InGaN/GaN quantum dots size grown by metal organic chemical vapor deposition (Invited Paper) [6121-01]

著者名:
Yao, H. H. ( National Chiao-Tung Univ. (Taiwan) )
Huang, G.S. ( National Chiao-Tung Univ. (Taiwan) )
Lu, T.C. ( National Chiao-Tung Univ. (Taiwan) )
Chen, C.Y. ( National Chiao-Tung Univ. (Taiwan) )
Liang, W.D. ( Kuo, H.C. )
National Chiao-Tung Univ. (Taiwan) ( Wang, S.C. )
さらに 1 件
掲載資料名:
Gallium Nitride Materials and Devices
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6121
発行年:
2006
開始ページ:
612102
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461636 [0819461636]
言語:
英語
請求記号:
P63600/6121
資料種別:
国際会議録

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