
Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density [6119-05]
- 著者名:
Liao C C ( National Defense Univ (Taiwan) ) Fang S F ( Chung-Shan Institute of Science and Technology (Taiwan) ) Chen T C ( National Defense Univ (Taiwan) ) Chiang C D ( Chung-Shan Institute of Science and Technology (Taiwan) ) Yang S T ( Chung-Shan Institute of Science and Technology (Taiwan) ) Su W K ( National Defense Univ (Taiwan) ) - 掲載資料名:
- Semiconductor photodetectors III : 25 January 2006, San Jose California, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6119
- 発行年:
- 2006
- 開始ページ:
- 611905
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819461612 [081946161X]
- 言語:
- 英語
- 請求記号:
- P63600/6119
- 資料種別:
- 国際会議録
類似資料:
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Society of Photo-optical Instrumentation Engineers |