Photoluminescene properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition [6020-123]

Photoluminescene properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition [6020-123]

著者名:

Fu G.

Ding W. ( Hebei Univ. (China) )

さらに 1 件

掲載資料名:

Optoelectronic Materials and Devices for Optical Communications

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6020

発行年:

2005

開始ページ:

60203E

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819460516 [0819460516]

言語:

英語

請求記号:

P63600/6020

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016055
シリーズID:	PA00000029
会議名:	APOC : Asia Communications and Photonics
回次:	2005
会議開催地:	Shanghai, China
会議開催年:	2015.11.07-2015.11.10

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