Si/Ge multilayer structure for optoelectronic applications [5946-36]

Si/Ge multilayer structure for optoelectronic applications [5946-36]

著者名:

Tonkikh, A. ( Institute for Analytical Instrumentation (Russia); )

Ioffe, A. F. ( Physico-Technical Institute (Russia), and Max-Planck-Institut fur Mikrostrukturphysik (Germany); )

Talalaev, V. ( Max-Planck-Institut fur Mikrostrukturphysick (Germany); and V. A. Fock Institute of Physics , St. Petersburg State Univ. (Russia); )

Zakharov, N.

Werner, P. ( Max-Planck-Institut fur Mikrostrukturphysick (Germany); )

さらに 1 件

掲載資料名:

Optical materials and applications : 6-9 July 2004, Tartu, Estonia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5946

発行年:

2005

開始ページ:

594610

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819459534 [0819459534]

言語:

英語

請求記号:

P63600/5946

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015983
シリーズID:	PA00000029
会議名:	Optical materials and applications
回次:	2004
会議開催地:	Tartu, Estonia
会議開催年:	2004.07.06-2004.07.09

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