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Impact of High-k Properties on MOSFET Electrical Characteristics

著者名:
Pantisano, Ll.
Ragnarsson, L. -A.
Houssa, M.
Degraeve, R.
Groeseneken, G.
Schram, T.
Degendt, S.
Heyns, M.
Afanas'ev, V.
さらに 4 件
掲載資料名:
Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices
シリーズ名:
NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号:
220
発行年:
2006
開始ページ:
97
終了ページ:
109
総ページ数:
13
出版情報:
Dordrecht: Springer
ISBN:
9781402043659 [1402043651]
言語:
英語
請求記号:
N17050/220
資料種別:
国際会議録

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