pVD High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-State Drive Current

pVD High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-State Drive Current

著者名:

Niwa, M.

掲載資料名:

Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices

シリーズ名:

NATO science series. Series 2, Mathematics, physics and chemistry

シリーズ巻号:

220

発行年:

2006

開始ページ:

1

終了ページ:

17

総ページ数:

17

出版情報:

Dordrecht: Springer

ISBN:

9781402043659 [1402043651]

言語:

英語

請求記号:

N17050/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015853
シリーズID:	PA00000025
会議名:	NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices
回次:	2005
会議開催地:	St. Petersburg, Russia
会議開催年:	2005.07.11-2005.07.14

類似資料:

1 国際会議録 Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application M. Niwa, R. Mitsuhashi, S. Hayashi, K. Yamamoto, Y. Harada, M. Kubota, A. Rothchild, T. Hoffmann, S. Kubicek, S. … Electrochemical Society	7 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society
2 国際会議録 Challenges and Opportunities in High-K Gate Dielectric Technology Niwa, M., Harada, Y., Yamamoto, K., Hayashi, S., Mitsuhashi, R., Eriguchi, K., Kubota, M., Hoshino, Y., Kido, Y, Kwong, … Electrochemical Society	8 国際会議録 INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING De Gendt, S., Beckx, S., Caymax, M., Claes, M., Conard, T., Delabie, A., Deweerd, W., Hellin, D., Kraus, H., Onsia, B., … Electrochemical Society
3 国際会議録 High-k Dielectrics Integration Prospects (Invited paper) Kubicek, S., Van Elshocht, S., Delabie, A., Yamamoto, K., Beckx, S., Claes, M., Van Hoornick, N., Kwak, D.-H., Hyun, S., … Electrochemical Society	9 国際会議録 Interface Technology for Advanced Gate Dielectrics* Niwa, M., Harada, Y., Eruguchi, K., Kwong, D.-L. Electrochemical Society
4 国際会議録 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics Lander, R., Schram, T., Lulan, G.S., hooker, J., Vertommen, J., Lee, S., de Weerd, W., Boullart, W., van Elshocht, S, … Electrochemical Society	10 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society
5 国際会議録 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets De Gendt, S., Brunco, D., Caymax, M., Canard, T., Date, L., Delabie, A., Deweerd, W., Groeseneken, G., Houssa, M., Hyun, … Electrochemical Society	11 国際会議録 High-Reliability ONO Gate Dielectric for Power MOSFETs Tanimoto, S., Tanaka, H., Hayashi, T., Shimoida, Y., Hoshi, M., Mihara, T. Trans Tech Publications
6 国際会議録 Alternative Gate Dielectric Materials S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, P. K. Baumann, D. P. Brunco, M. R. Caymax, F. Conard, P. Delugas, … Electrochemical Society	12 国際会議録 Advanced Nano-analysis of High-k Dielectric Stacks M. MacKenzie, A. Craven, D. McComb, S. De Gendt Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12