Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
- 著者名:
Bassim, N.D. Twigg, M.E. Mastro, M.A. Neudeck, P.G. Eddy, C.R.Jr. Henry, R.L. Holm, R.N. Powell, J.A. Trunek, A.J. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 2
- 開始ページ:
- 1509
- 終了ページ:
- 1512
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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