Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1441

終了ページ:

1444

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications	7 国際会議録 Optical Switch-On of Silicon Carbide Thyristor Levinshtein, M.E., Ivanov, P.A., Agarwal, A.K., Palmour, J.W. Trans Tech Publications
2 国際会議録 Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation Mode P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, Q.J. Zhang Trans Tech Publications	8 国際会議録 Self-Heating of 4H-SiC PiN Diodes at High Current Densities M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, J.W. Palmour, M.K. Das Trans Tech Publications
3 国際会議録 Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	9 国際会議録 Low-frequency noise in 4H-SiC BJTs Rumyantsev, S. L., Levinshtein, M. E., Agarwal, A. K., Palmour, J. W. SPIE - The International Society of Optical Engineering
4 国際会議録 Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	10 国際会議録 First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs Agarwal, A.K, Husna, F., Haley, J., Bartlow, H., McCalpin, B., Krishnaswami, S., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
5 国際会議録 Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications	11 国際会議録 High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes Levinshtein, M.E., Ivanov, P.A., Boltovets, M.S., Krivutsa, V.A., Palmour, J.W., Das, M.K., Hull, B.A. Trans Tech Publications
6 国際会議録 Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling) P.A. Ivanov, V.S. Yuferev, M.E. Levinshtein, J.Q. Zhang, J.W. Palmour Trans Tech Publications	12 国際会議録 Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs Agarwal, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, S.H., Palmour, J., Geil, B.R, Katsis, D., Scozzie, C.J., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12