Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Current Gain Dependence on Emitter Width in 4H-SiC BJTs

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

1425

終了ページ:

1428

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, R. Ghandi, M. Östling Trans Tech Publications	7 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications
2 国際会議録 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications	8 国際会議録 Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications
3 国際会議録 A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling, E.O. Sveinbjornsson Trans Tech Publications	9 国際会議録 Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications
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5 国際会議録 Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE B. Buono, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications	11 国際会議録 Investigation of Current Gain Degradation in 4H-SiC Power BJTs B. Buono, R. Ghandi, M. Domeij, B.G. Malm, C.M. Zetterling Trans Tech Publications
6 国際会議録 A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Danielsson, E., Domeij, M., Lee, H. S., Zetterling, C. M., Ostling, M., Schoner, A., Hallin, C. Trans Tech Publications	12 国際会議録 Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs B. Buono, R. Ghandi, M. Domeij, B.G. Malm, C.M. Zetterling Trans Tech Publications

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