Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces | 東京工業大学附属図書館文献データベース

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

著者名:

Ciobanu, F.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

991

終了ページ:

994

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications	7 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications
2 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	8 国際会議録 SiC/SiO2 interface defects Afanas'ev, V. V. Kluwer Academic Publishers
3 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications	9 国際会議録 Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001) Afanas'ev, V.V., Campbell, S.A., Cheong, K.Y., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A., Zhong, L. Trans Tech Publications
4 国際会議録 Traps at the SiC/SiO2-Interface Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, … Materials Research Society	10 国際会議録 Physics of SiC Processing Pensl, G., Afanas'ev, V. V., Bassler, M., Frank, T., Laube, M., Weidner, M. Trans Tech Publications
5 国際会議録 Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum T. Frank, S. Beljakowa, G. Pensl, T. Kimoto, V. Afanas'ev Trans Tech Publications	11 国際会議録 Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface Afanas'ev,V.V., Stesmans,A., Harris,C.I. Trans Tech Publications
6 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications	12 国際会議録 Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H.B. Weber Trans Tech Publications

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