Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances | 東京工業大学附属図書館文献データベース

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

935

終了ページ:

948

総ページ数:

14

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System Pantelides, S.T., Buczko, R., Ventra, M. Di, Wang, S., Kim, S.-G., Pennycook, S.J., Duscher, G., Feldman, L.C., … Materials Research Society	8 国際会議録 Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces Tsetseris, L., Zhou, X., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. Materials Research Society
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