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Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

著者名:
Tumakha, S.P.
Porter, L.M.
Ewing, D.J.
Wahab, Q.
Ma, X.Y.
Sudarshan, T.S.
Brillson, L.J.
さらに 2 件
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
2
開始ページ:
907
終了ページ:
910
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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Materials Research Society

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