Variations in the Effects of Implanting Al at Different Concentrations into SiC

Variations in the Effects of Implanting Al at Different Concentrations into SiC

著者名:

Jones, K.A.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

831

終了ページ:

834

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence Freitas, J.A.Jr., Jones, K.A., Derenge, M.A., Vispute, R.D., Hullavard, S. Trans Tech Publications	8 国際会議録 Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped … Zhu, L., Losee, P.A., Chow, T.P., Jones, K.A., Scozzie, C.J., Ervin, M.H., Shah, P.B., Derenge, M.A., Vispute, R.D., … Trans Tech Publications
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