Development and Investigation on ERAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Development and Investigation on ERAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

著者名:

Shibagaki, M.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

2

開始ページ:

807

終了ページ:

810

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal Shibagaki, M., Kurematsu, Y., Watanabe, F., Haga, S., Miura, K., Suzuki, T., Satoh, M. Trans Tech Publications	7 国際会議録 Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation M. Satoh, S. Nagata, T. Nakamura, H. Doi, M. Shibagaki Trans Tech Publications
2 国際会議録 Impact of EBAS Annealing on Sheet Resistance Reduction for Al-Implanted 4H-SiC(0001) Masami Shibagaki, Akihiro Egami, Akira Kumagai, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Shingo … Materials Research Society	8 国際会議録 Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100) Y. Suzuki, E. Taguchi, S. Nagata, M. Satoh Trans Tech Publications
3 国際会議録 Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS A. Egami, M. Shibagaki, A. Kumagai, K. Numajiri, S. Miyagawa, T. Kudo, S. Uchiumi, M. Satoh Trans Tech Publications	9 国際会議録 Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate E. Taguchi, Y. Suzuki, M. Satoh Trans Tech Publications
4 国際会議録 Annealing Effect on Characteristics of p⁺n 4H-SIC Diode Formed by Al Ion Implantation M. Satoh, S. Miyagawa, T. Kudoh, A. Egami, K. Numajiri Trans Tech Publications	10 国際会議録 Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC Satoh, M. Trans Tech Publications
5 国際会議録 Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures Satoh, M., Suzuki, T., Miyagawa, S. Trans Tech Publications	11 国際会議録 Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC Satoh, M. Trans Tech Publications
6 国際会議録 Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film S. Miyagawa, T. Suzuki, T. Kudo, M. Satoh Trans Tech Publications	12 国際会議録 Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications

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