Blank Cover Image

Characterization of SiC Wafers by Photohlminescence Mapping

著者名:
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
1
開始ページ:
711
終了ページ:
716
総ページ数:
6
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

N. Hoshino, M. Tajima, T. Hayashi, T. Nishiguchi, H. Kinoshita, H. Shiomi

Trans Tech Publications
7 国際会議録 Photoluminescence Mapping of a SiC Wafer in Device Processing

Tajima, M., Sugahara, T., Hoshino, N., Tanimoto, S., Takahashi, T., Nakashima, S., Yamamoto, T.

Trans Tech Publications
2 国際会議録 Improvement of SiC Wafer Warp by Annealing

Sasaki, M., Harada, S., Okamoto, Y., Kinoshita, H., Miyanagi, Y., Shiomi, H.

Trans Tech Publications
8 国際会議録 Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping

Tajima,M., Kumagaya,Y., Nakata,T., Inoue,M., Nakamura,A.

Trans Tech Publications
3 国際会議録 Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

M. Nakamura, Y. Hashino, T. Furusho, H. Kinoshita, H. Shiomi

Trans Tech Publications
9 国際会議録 Observation of 2in SiC Wafer by SWBXT at SPring-8

Sasaki, M., Hirai, A., Miyanagi, T., Furusho, T., Nishiguchi, T., Shiomi, H., Nishino, S.

Trans Tech Publications
4 国際会議録 Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

Furusho, T., Kobayashi, R., Nishiguchi, T., Sasaki, M., Hirai, K., Hayashi, T., Kinoshita, H., Shiomi, H.

Trans Tech Publications
10 国際会議録 Observation of 2in SiC Wafer by SWBXT at SPring-8

Sasaki, M., Hirai, A., Miyanagi, T., Furusho, T., Nishiguchi, T., Shiomi, H., Nishino, S.

Trans Tech Publications
5 国際会議録 Characterization of SOI wafers by photoluminescence spectroscopy, decay and micro/macro-mapping

Tajima, M.

Electrochemical Society
11 国際会議録 Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation

H. Isono, M. Tajima, N. Hoshino, H. Sugimoto

Trans Tech Publications
6 国際会議録 Characterization of 2 Inch SiC Wafers Made by the Sublimation Method

Sasaki, M., Shiomi, H., Nishino, S.

Trans Tech Publications
12 国際会議録 Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

Tajima, M., Tanaka, M., Hoshino, N.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12