Europium Induced Deep Levels in Hexagonal Silicon Carbide

Europium Induced Deep Levels in Hexagonal Silicon Carbide

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

659

終了ページ:

662

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide Pasold, G., Albrecht, F., Hulsen, C., Sielemann, R., Zeitz, W.D., Witthuhn, W. Trans Tech Publications	7 国際会議録 Radiotracer Spectroscopy on Group II Acceptors in GaN Albrecht, F., Pasold, G., Grillenberger, J., Reisloehner, U., Dietrich, M., Witthuhn, W. Trans Tech Publications
2 国際会議録 A Deep Erbium-Related Bandgap State in 4H Silicon Carbide Pasold, G., Albrecht, F., Grillenberger, J., Grossner, U., Hulsen, C., Sielemann, R., Witthuhn, W. Trans Tech Publications	8 国際会議録 Intrinsic deep levels in semi-insulating silicon carbide Mitchel, W.C., Mitchell, W.D., Landis, G. SPIE - The International Society of Optical Engineering
3 国際会議録 Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels Grillenberger, J., Achtziger, N., Pasold, G., Sielemann, R., Witthuhn, W. Trans Tech Publications	9 国際会議録 Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC Hulsen, C., Achtziger, N., Reislohner, U., Witthuhn, W. Trans Tech Publications
4 国際会議録 Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS Grossner, U., Grillenberger, J., Albrecht, F., Pasold, G., Sielemann, R., Svensson, B.G., Witthuhn, W. Trans Tech Publications	10 国際会議録 Irradiation-induced Deep Levels in Silicon（Invited Paper） Siemieniec, R., Niedermostheide, F.-J., Schulze, H.-J., Sudkamp, W., Kellner-Werdehausen, U., Lutz, J. Electrochemical Society
5 国際会議録 Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC Grillenberger, J., Achtziger, N., Pasold, G., Witthuhn, W. Trans Tech Publications	11 国際会議録 Mid-infrared photoconductivity spectra of donor impurities in hexagonal silicon carbide Linville, R. J., Brown, G. J., Mitchel, W. C., Saxler, A., Perrin, R. MRS-Materials Research Society
6 国際会議録 Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC Grillenberger, J., Achtziger, N., Pasold, G., Witthuhn, W. Trans Tech Publications	12 国際会議録 Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of Hydrogen Achtziger, N., Hulsen, C., Janson, M. S., Linnarsson, M. K., Svensson, B. G., Witthuhn, W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12