Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
- 著者名:
Chung, H.J. Huh, S.W. Polyakov, A.Y. Nigam, S. Li, Q. Grim, J. Skowronski, M. Glaser, E.R. Carlos, W.E. Freitas, J.A. Fanton, M.A. - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 625
- 終了ページ:
- 628
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
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4
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Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
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