Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

著者名:

Yan, F.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

585

終了ページ:

588

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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3 国際会議録 Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto Trans Tech Publications	9 国際会議録 Columnar Pore Growth in n-Type 6H SiC Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J. Trans Tech Publications
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