Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

著者名:

Huh, S.W.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

497

終了ページ:

500

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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1 国際会議録 Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Chung, H.J., Huh, S.W., Polyakov, A.Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E.R., Carlos, W.E., … Trans Tech Publications	7 国際会議録 Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition M.E. Zvanut, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications
2 国際会議録 Halide-CVD Growth of Bulk SiC Crystals Polyakov, A.Y., Fanton, M.A., Skowronski, M., Chung, H.J., Nigam, S., Huh, S.W. Trans Tech Publications	8 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
3 国際会議録 Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Garces, N.Y., Carlos, W.E., Glaser, E.R., Huh, S.W., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications	9 国際会議録 Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals Fanton, M.A., Li, Q., Polyakov, A.Y., Cavalero, R.L., Ray, R.G., Weiland, B.E., Skowronski, M. Trans Tech Publications
4 国際会議録 Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC Nigam, S., Chung, H.J., Huh, S.W., Grim, J., Polyakov, A.Y., Fanton, M.A., Weiland, B., Snyder, D.W., Skowronski, M. Trans Tech Publications	10 国際会議録 Resistivity Distribution in Undoped 6H-SiC Boules and Wafers Li, Q., Polyakov, A.Y., Skowronski, M., Sanchez, E.K., Loboda, M.J., Fanton, M.A., Bogart, T., Gamble, D., Smirnov, … Trans Tech Publications
5 国際会議録 Growth of Bulk SiC by Halide Chemical Vapor Deposition Fanton, M., Skowronski, M., Snyder, D., Chung, H.J., Nigam, S., Weiland, B., Huh, S.W. Trans Tech Publications	11 国際会議録 Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC M.E. Zvanut, G. Ngetich, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications
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