Investigation of the Displacement Threshold of Si in 4H SiC

Investigation of the Displacement Threshold of Si in 4H SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

481

終了ページ:

484

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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6 国際会議録 The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	12 国際会議録 Electron Irradiation of 4H SiC by TEM: An Optical Study Sridhara, S.G., Persson, P.O.Å., Carlsson, F.H.C., Bergman, J.P., Janzen, E., Evans, G., Steeds, J.W. Materials Research Society

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