Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation Method

Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation Method

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

391

終了ページ:

394

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Current Transport Mechanisms in 4H-SiC PiN Diodes Camara, N., Bano, E., Zekentes, K. Trans Tech Publications	8 国際会議録 CM-Wave Modulator with High-Voltage 4H SiC pin Diodes Boltovets, M.S., Basanets, V.V., Zorenko, A.V., Krivutsa, V.A., Camara, N., Orechovskij, V.O., Simonchuk, V.I., … Trans Tech Publications
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