Blank Cover Image

Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates

著者名:
Bahng, W.
Cheong, H.J.
Kang, I.H.
Kim, S.C.
Kim, K.H.
Kim, N.K.
さらに 1 件
掲載資料名:
Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
シリーズ名:
Materials science forum
シリーズ巻号:
527-529
発行年:
2006
パート:
1
開始ページ:
207
終了ページ:
210
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494255 [0878494251]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics

W. Bahng, H.J. Cheong, I.H. Kang, S.J. Kim, S.C. Kim, S.J. Joo, N.K. Kim

Trans Tech Publications
7 国際会議録 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique

Song, G.H., Kim, H.W., Bahng, W., Kim, S.C., Kim, N.K.

Trans Tech Publications
2 国際会議録 Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

I.H. Kang, W. Bahng, S.J. Joo, S.C. Kim, N.K. Kim

Trans Tech Publications
8 国際会議録 Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

R.W. Zhou, X.C. Liu, H.J. Guo, H.K. Kong, E.W. Shi

Trans Tech Publications
3 国際会議録 Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

I.H. Kang, W. Bahng, S.C. Kim, S.J. Joo, N.K. Kim

Trans Tech Publications
9 国際会議録 Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation …

I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim

Trans Tech Publications
4 国際会議録 Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET

I.H. Kang, S.J. Joo, W. Bahng, S.C. Kim, N.K. Kim

Trans Tech Publications
10 国際会議録 Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Jeong, J.K., Um, M.Y., Na, H.J., Kim, B.S., Song, I.B., Kim, H.J.

Trans Tech Publications
5 国際会議録 Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

J.H. Moon, K.Y. Cheong, D.I. Eom, H.K. Song, J.H. Yim, J.H. Lee, H.J. Na, W. Bahng, N.K. Kim, H.J. Kim

Trans Tech Publications
11 国際会議録 Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang

Trans Tech Publications
6 国際会議録 Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Cheong, K. Y., Bahng, W., Kim, N. K.

Trans Tech Publications
12 国際会議録 Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N., Yakimova, R., Syvaejaervi, M., Jacobson, H., Stoemenos, J., Janzen, E.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12