Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

175

終了ページ:

178

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases M. J. Loboda, M. F. MacMillan, J. Wan, G. Chung, E. Carlson, Y. Makarov, A. Galyukov, M. J. Molnar Materials Research Society	7 国際会議録 A New Method of Mapping and Counting Micropipes In SiC Wafers Wan, J.W., Park, S.H., Chung, G., Carlson, E., Loboda, M.J. Trans Tech Publications
2 国際会議録 Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System J.W. Wan, M.J. Loboda, M.F. MacMillan, G.Y. Chung, E.P. Carlson, V.M. Torres Trans Tech Publications	8 国際会議録 A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC Hansen, D.M., Chung, G., Loboda, M.J. Trans Tech Publications
3 国際会議録 Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates M.F. MacMillan, M.J. Loboda, J.W. Wan, G.Y. Chung, E.P. Carlson, M.J. Spaulding, D. Deese Trans Tech Publications	9 国際会議録 Defect Reduction in SiC Growth Using Physical Vapor Transport Darren M. Hansen, Mark J. Loboda, Roman V. Drachev, Edward K. Sanchez, Jie Zhang, Eric P. Carlson, Jianwei Wan, Gil … Materials Research Society
4 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications	10 国際会議録 Micropipe Dissociation through Thick n+ Buffer Layer Growth M.F. MacMillan, E.K. Sanchez, M. Dudley, Y. Chen, M.J. Loboda Trans Tech Publications
5 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications	11 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications
6 国際会議録 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer G.Y. Chung, M.J. Loboda, J. Zhang, J.W. Wan, E.P. Carlson Trans Tech Publications	12 国際会議録 Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor Song, H. K., Um, M. Y., Na, H. J., Kim, D. H., Song, I. B., Jung, S. Y., Jeong, J. K., Lee, J. B., Kim, H. J. Trans Tech Publications

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