Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers

Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

147

終了ページ:

152

総ページ数:

6

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition Kojima, K., Takahashi, T., Ishida, Y., Kuroda, S., Okumura, H., Arai, K. Trans Tech Publications	7 国際会議録 Improvement of Homoepitaxial Layer Quality Grown on 4H-SiC Si-Face Substrate Lower than 1 Degree Off Angle K. Kojima, S. Ito, A. Nagata, H. Okumura Trans Tech Publications
2 国際会議録 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method Kojima, K., Okumura, H., Kuroda, S., Arai, K., Ohi, A., Akinaga, H. Trans Tech Publications	8 国際会議録 Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals Kato, T., Kojima, K., Nishizawa, S. I., Arai, K. Trans Tech Publications
3 国際会議録 Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth K. Kojima, S. Kuroda, H. Okumura, K. Arai Trans Tech Publications	9 国際会議録 Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001) S. Tsukimoto, T. Ise, G. Maruyama, S. Hashimoto, T. Sakurada, J. Senzaki, T. Kato, K. Kojima, H. Okumura Trans Tech Publications
4 国際会議録 Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition Nishio, J., Kushibe, M., Masahara, K., Kojima, K., Ohno, T., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications	10 国際会議録 Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth K. Kojima, H. Okumura, K. Arai Trans Tech Publications
5 国際会議録 Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition Nishio, J., Kushibe, M., Masahara, K., Kojima, K., Ohno, T., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, T., Yoshida, … Trans Tech Publications	11 国際会議録 Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy T. Kitamura, S. Nakashima, T. Kato, K. Kojima, H. Okumura Trans Tech Publications
6 国際会議録 Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth Ishida, Y., Takahashi, T., Kojima, K., Okumura, H., Arai, K., Yoshida, S. Trans Tech Publications	12 国際会議録 Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Senzaki, J., Kojima, K., Kato, T., Shimozato, A., Fukuda, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12