Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
- 著者名:
Sumakeris, J.J. Bergman, J.P. Das, M.K. Hallin, C. Hull, B.A. Janzen, E. Lendenmann, H. O'Loughlin, M.J. Paisley, M.J. Ha, S. Skowronski, M. Palmour, J.W. Carter, C.H.,Jr - 掲載資料名:
- Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 527-529
- 発行年:
- 2006
- パート:
- 1
- 開始ページ:
- 141
- 終了ページ:
- 146
- 総ページ数:
- 6
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494255 [0878494251]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
国際会議録
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
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