The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

著者名:

Kim, K.M.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

55

終了ページ:

58

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

類似資料:

1 国際会議録 The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method Kim, J.W., Seo, S.H., Kim, K.M., Song, J.S., Kim, T.S., Oh, M.H. Trans Tech Publications	7 国際会議録 Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC Bahng, W., Song, G.H., Kim, N.K., Kim, S.C., Seo, K.S., Kim, H.W., Kim, E.D. Trans Tech Publications
2 国際会議録 Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method Seo, S.H., Park, J.H., Song, J.S., Oh, M.H. Trans Tech Publications	8 国際会議録 Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs Song, G.H., Bahng, W., Kim, N.K., Kim, S.C., Seo, K.S., Kim, E.D. Trans Tech Publications
3 国際会議録 Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and β-SiC Powders Seo, S. H., Song, J. S., Oh, M. H., Wang, Y. Z. Trans Tech Publications	9 国際会議録 Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy Y.J. Shin, W.J. Kim, H.Y. Kim, W. Bahng Trans Tech Publications
4 国際会議録 Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate Seo, S.H., Lee, T.H., Park, J.S., Song, J.S., Oh, M.H. Trans Tech Publications	10 国際会議録 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Schulz, D., Irmscher, K., Dolle, J., Eiserbeck, W., Muller, T., Rost, H. -J., Siche, D., Wagner, G., Wollweber, J. Trans Tech Publications
5 国際会議録 Shape of SiC Bulk Single Crystal Grown by Sublimation Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M. N., Arai, K. Trans Tech Publications	11 国際会議録 Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation … I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim Trans Tech Publications
6 国際会議録 Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals Seo, S. H., Song, J. S., Oh, M. H., Wang, Y. Z. Trans Tech Publications	12 国際会議録 Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation Bahng, W., Song, G. H., Kim, N. K., Kim, S. C., Kim, H. W., Seo, K. S., Kim, E. D. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12