Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC

Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC

著者名:

Nigam, S.

掲載資料名:

Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005

シリーズ名:

Materials science forum

シリーズ巻号:

527-529

発行年:

2006

パート:

1

開始ページ:

27

終了ページ:

30

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494255 [0878494251]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015830
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2005
会議開催地:	Pittsburgh, Pennsylvania, USA
会議開催年:	2005.09.18-2005.09.23

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2 国際会議録 Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Chung, H.J., Huh, S.W., Polyakov, A.Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E.R., Carlos, W.E., … Trans Tech Publications	8 国際会議録 Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Glaser, E.R., Shanabrook, B.V., Carlos, W.E., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications
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4 国際会議録 Halide-CVD Growth of Bulk SiC Crystals Polyakov, A.Y., Fanton, M.A., Skowronski, M., Chung, H.J., Nigam, S., Huh, S.W. Trans Tech Publications	10 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
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