Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact

Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact

著者名:

Tan, C.K.

掲載資料名:

Functional materials and devices : papers presented at the International Conference on Functional Materials and Devices 2005 (ICFMD-2005), held in Kuala Lumpur, Malaysia, 6th-8th June 2005

シリーズ名:

Materials science forum

シリーズ巻号:

517

発行年:

2006

開始ページ:

262

終了ページ:

266

総ページ数:

5

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494040 [0878494049]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015824
シリーズID:	PA00000012
会議名:	International Conference on Functional Materials and Devices - ICFMD
回次:	2005
会議開催地:	Kuala Lumpur, Malaysia
会議開催年:	2005.06.06-2005.06.08

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