Reduction of Effective Barrier Height in PtSi-p-Si Schottky Diodes Using Low Energy Ion Implantation

Reduction of Effective Barrier Height in PtSi-p-Si Schottky Diodes Using Low Energy Ion Implantation

著者名:

掲載資料名:

Thin films and interfaces : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

10

発行年:

1982

開始ページ:

419

終了ページ:

424

総ページ数:

6

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444007742 [0444007741]

言語:

英語

請求記号:

M23500/10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015808
シリーズID:	PA00000011
会議名:	Materials Research Society annual meeting ; Symposium on thin films and interfaces
回次:	1981
会議開催地:	Boston, MA, USA
会議開催年:	1981.11.00

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