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Epitaxial Silicides

著者名:
掲載資料名:
Thin films and interfaces : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
10
発行年:
1982
開始ページ:
79
終了ページ:
92
総ページ数:
14
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444007742 [0444007741]
言語:
英語
請求記号:
M23500/10
資料種別:
国際会議録

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1 国際会議録 LIQUID PHASE GROWTH OF EPITAXIAL Ni AND Co SILICIDES BY PULSED LASER IRRADIATION

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7 国際会議録 *ELECTRICAL PROPERTIES OF EPITAXIAL SILICIDE-SILICON INTERFACES

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2 国際会議録 The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System

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8 国際会議録 THE ROLE OF LATTICE MISMATCH IN GROWTH OF EPITAXIAL CUBIC SILICIDES ON SILICON

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3 国際会議録 THE FORMATION OF THIN LAYERS AND DOBLE HETEROSTRUCTURES OF EPITAXIAL SILICIDES

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9 国際会議録 *STRUCTURAL STUDIES OF METAL-SEMICONDUCTOR INTERFACES WITH HIGH-RESOLUTION ELECTRON MICROSCOPY

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4 国際会議録 Crystallography and interfaces of epitaxial fluorite metals and insulators on semiconductors

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5 国際会議録 Transport studies in single-crystal films of CoSi2 and NiSi2

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11 国際会議録 ADMITTANCE MEASUREMENT AT EPITAXIAL AND NONEPITAXIAL SILICIDE SCHOTTKY CONTACTS

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