INCREASED UNIFORMITY OF SILICON NEEDED FOR CRITICAL DEVICES. HOW CAN WE IMPROVE THE FLOAT ZONE PROCESS?

INCREASED UNIFORMITY OF SILICON NEEDED FOR CRITICAL DEVICES. HOW CAN WE IMPROVE THE FLOAT ZONE PROCESS?

著者名:: Kern, Edward L.
掲載資料名:: Materials processing in the reduced gravity environment of space : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:: Materials Research Society symposium proceedings
シリーズ巻号:: 9
発行年:: 1982
開始ページ:: 445
終了ページ:: 448
総ページ数:: 4
出版情報:: New York: North-Holland
ISSN:: 02729172
ISBN:: 9780444006912 [0444006915]
言語:: 英語
請求記号:: M23500/9
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00015807
シリーズID:	PA00000011
会議名:	Materials Research Society annual meeting ; Symposium on materials processing in the reduced gravity environment of space
回次:	1981
会議開催地:	Boston, MA, USA
会議開催年:	1981.11.16-1981.11.18

類似資料:

1 国際会議録 Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications? Job, R., Ulyashin, A.G., Huang, Y.L., Fahrner, W.R., Simoen, E., Claeys, C., Niedernostheide, F.-J., Schulze, H.-J., … Materials Research Society	7 国際会議録 Iron-Gallium Pair Defects in Float-Zoned Silicon Ciszek, T.F., Wang, T.H., Doolittle, W.A., Rohatgi, A.R. Electrochemical Society
2 国際会議録 EIS Characterization of Ultra High Purity, Float Zone Single Crystal Silicon P. Viscor, O. Andersen, T. Clausen, P.A. Ellsmore, L. Jensen Electrochemical Society	8 国際会議録 Vacancy-Nitrogen Complexes in Float-Zone Silicon Quast, F., Pichler, P., Ryssel, H., Falster, R. Electrochemical Society
3 国際会議録 Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned Silicon V. V. Voronkov, G. Voronkova, A. Batunina, R. J. Falster, L. Moiraghi, M. Milvidski Electrochemical Society	9 国際会議録 Vacancy-Nitrogen Complexes in Float-Zone Silicon Quast,F., Pichler,P., Ryssel,H., Falster,R. Electrochemical Society, SPIE-The International Society for Optical Engineering
4 国際会議録 Defect Induced Charge Transfer Losses in High Resistivity Float Zone Silicon Charge Coupled Devices Soltau, H., Krause, N., Meidinger, N., Hauff, D., Krisch, S., Zhanthier, C.v. Electrochemical Society	10 国際会議録 Iron Precipitation and Dissolution in Float-Zone silicon Ramappa, Deepak A., Henley, Worth B. MRS - Materials Research Society
5 国際会議録 (115f) Concept to Commercialization - How Can We Improve The Process? John E. Pace American Institute of Chemical Engineers	11 国際会議録 Float zone silicon for infrared and microwave applications Clausen, T. SPIE - The International Society of Optical Engineering
6 国際会議録 Float Zone Pedestal Growth of Thin Silicon Filaments Ciszek, T.F., Wang, T.H. Electrochemical Society	12 国際会議録 Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon P. Viscor, O. Andersen, T. Clausen, P.A. Ellsmore, L. Jensen Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12