Blank Cover Image

MOSSBAUER SPECTROSCOPY STUDY OF THE AMORPHIZATION OF TELLURIUM BY ION IMPLANTATION

著者名:
Langouche, G.
Dezsi, I.
Van Rossum, M.
De Potter, M.
De Bruyn, J.
Schroyen, D.
Coussement, R.
さらに 2 件
掲載資料名:
Metastable materials formation by ion implantation : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
7
発行年:
1982
開始ページ:
211
終了ページ:
216
総ページ数:
6
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444006929 [0444006923]
言語:
英語
請求記号:
M23500/7
資料種別:
国際会議録

類似資料:

1 国際会議録 Laser annealing of Te-implanted III-V semiconductors studied by Mossbauer spectroscopy

Van Rossum, M., Dezsi, I., Langouche, G., De Bruyn J., Coussement, R.

North Holland
7 国際会議録 Mossbauer Study of the DX-Center in Te-Implanted AlxGa1-As

Bemelmans H., Borghs G., Langouche G.

Kluwer Academic Publishers
2 国際会議録 Laser and thermal annealing of Co-implanted Si studied by Mossbauer spectroscopy

Langouche, G., Potter, M. de, Van Rossum, M., De Bruyn, J., Dezsi, I., Coussement, R.

North Holland
8 国際会議録 A Depth Selective Mossbauer Study of Ion Implanted Stainless Steel

Walter, G., Stahl, B., Nagel, R., Gellert, R., Ruck, D. M., Muller, M., Klingelhofer, G., Kankeleit, E., Soltani-Farshi, …

MRS - Materials Research Society
3 国際会議録 SITE OCCUPATION OF IMPLANTED Te IN GaAs AS A FUNCTION OF IMPLANTATION DOSE

Langouche, G., Schroyen, D., Bemelmans, H., Van Rossum, M., De Raedt, W., de Potter, M.

Materials Research Society
9 国際会議録 TRIBOLOGICAL AND MOSSBAUER STUDIES OF ION-IMPLANTED IRON

Williamson, D. L., Qu, Y., Wei, R., Sampath, W. S.., Wilbur, P. J.

Materials Research Society
4 国際会議録 Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS

Langouche,G., Bemelmans,H., Odeurs,J., Borghs,G., Potter,M.De, Deraedt,W., Rossum,M.Van

Trans Tech Publications
10 国際会議録 A CRITICAL REGIME FOR AMORPHIZATION OF ION IMPLANTED SILICON

Goldberg, R. D., Williams, J. S., Elliman, R. G.

MRS - Materials Research Society
5 国際会議録 In Search of Co-Acceptor Pairs in Highly Doped p-Si:A Mossbauer Spectroscopy Study

Bavel,A,-M.Van, Langouche,G.

Trans Tech Publications
11 国際会議録 A critical regime for amorphization of ion implanted silicon

Goldberg, R. D., Williams, J. S., Elliman, R. G.

MRS - Materials Research Society
6 国際会議録 Positron Annihilation and Mossbauer Spectroscopy of B2 Alloys

Balogh,A.G., Dezsi,I., Pelloth,J., Brand,R.A., Keune,W., Puff,W.

Trans Tech Publications
12 国際会議録 EVOLUTION OF DEFECT STRUCTURES AROUND Te IMP-LANTED IN GaAs DURING SOLID PHASE EPITAXIAL REGROWTH.

SCHROYEN,D., HENDRICKX,P., LANGOUCHE,G.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12