Binary HfO2:SiO2 Used as High-k Gate Oxide Material in Combinatorial Material Library Method

Binary HfO2:SiO2 Used as High-k Gate Oxide Material in Combinatorial Material Library Method

著者名:

Chao, Wen-Hsuan

掲載資料名:

Combinatorial methods and informatics in materials science : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

894

発行年:

2006

開始ページ:

91

終了ページ:

98

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998483 [1558998489]

言語:

英語

請求記号:

M23500/894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015791
シリーズID:	PA00000011
会議名:	Symposium on combinatorial methods and informatics in materials science
回次:	2005
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.01

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