Stress Evolution During the Early Stages of AlN Vapor Growth
- 著者名:
Wu, B. Bai, J. Tassev,, V. L. Lal Nakarmi M. Sun, W. Huang, X. Dudley, M. Zhang, H. Bliss, D. F. Lin, J. Jiang, H. Yang, J. Asif Kahn, M. - 掲載資料名:
- GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 892
- 発行年:
- 2006
- 開始ページ:
- 653
- 終了ページ:
- 658
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998469 [1558998462]
- 言語:
- 英語
- 請求記号:
- M23500/892
- 資料種別:
- 国際会議録
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10
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Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AIN Epilayers
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