Effects of the High-Refractive Index SiN Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage Current

Effects of the High-Refractive Index SiN Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage Current

著者名:

掲載資料名:

GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

892

発行年:

2006

開始ページ:

69

終了ページ:

76

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998469 [1558998462]

言語:

英語

請求記号:

M23500/892

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015789
シリーズID:	PA00000011
会議名:	Symposium on GaN, AIN, InN and related materials
回次:	2005
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.02

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