Evaluation on Defects of Er and Yb Implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy

Evaluation on Defects of Er and Yb Implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy

著者名:

掲載資料名:

Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

891

発行年:

2006

開始ページ:

179

終了ページ:

184

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998452 [1558998454]

言語:

英語

請求記号:

M23500/891

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015788
シリーズID:	PA00000011
会議名:	Symposium on progress in semiconductor materials
回次:	5th
会議開催地:	Boston, MA, USA
会議開催年:	2005.11.28-2005.12.01

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