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Evaluation on Defects of Er and Yb Implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy

著者名:
掲載資料名:
Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
891
発行年:
2006
開始ページ:
179
終了ページ:
184
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998452 [1558998454]
言語:
英語
請求記号:
M23500/891
資料種別:
国際会議録

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