IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS

IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS

著者名:

掲載資料名:

Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

297

発行年:

1993

開始ページ:

871

終了ページ:

876

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991934 [155899193X]

言語:

英語

請求記号:

M23500/297

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015781
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.13-1993.04.16

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