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*MEASUREMENTS OF SiH3 AND SiH2 RADICAL DENSITIES IN RF SILANE PLASMAS USING LASER SPECTROSCOPIC TECHNIQUES

著者名:
Goto, T.  
掲載資料名:
Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
297
発行年:
1993
開始ページ:
3
終了ページ:
12
総ページ数:
10
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991934 [155899193X]
言語:
英語
請求記号:
M23500/297
資料種別:
国際会議録

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