HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS

HIGH CHANNEL MOBILITY a-Si:H THIN FILM TRANSISTORS WITH OXIDE-NITRIDE DIELECTRICS

著者名:

掲載資料名:

Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

284

発行年:

1993

開始ページ:

413

終了ページ:

418

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991798 [1558991794]

言語:

英語

請求記号:

M23500/284

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015768
シリーズID:	PA00000011
会議名:	Symposium on amorphous insulating thin films
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.12.01-1992.12.04

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2 国際会議録 IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILM TRANSISTORS, TFTs WITH n+ μc-Si CONTACT, AND SILICON OXIDE AND NITRIDE DUAL-LAYER DIELECTRICS He, S.S., Stephens, D.J., Lucovsky, G. Materials Research Society	8 国際会議録 High mobility solution-processed n-channel organic thin film transistors H. Yan, S. Lu, Y. Zheng, P. Inagaki, A. Facchetti Society of Photo-optical Instrumentation Engineers
3 国際会議録 BACK-CHANNEL SURFACE MODIFICATIONS FOR a-Si:H THIN FILM TRANSISTORS, TFTs, BY EXPOSURE TO PLASMA EXCITED N2O He, S. S., Stephens, D. J., Lucovsky, G. MRS - Materials Research Society	9 国際会議録 Characterization of Silicon Nitride Films for the Thin Film Transistor Gate Dielectric Abbasi, S., Abu-Safe, H., Naseem, H., Brown, W. Electrochemical Society
4 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S. Materials Research Society	10 国際会議録 High Mobility ZnO Thin Film Transistors Using the Novel Deposition of High-k Dielectrics D. K. Ngwashi, R. B. M. Cross, S. Paul, Andrian P. Milanov, Anjana Devi Materials Research Society
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