CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS

CHANNEL LAYER SURFACE MODIFICATIONS IN a-Si:H THIN FILM TRANSISTORS WITH OXIDE/NITRIDE DIELECTRIC LAYERS

著者名:

掲載資料名:

Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

282

発行年:

1993

開始ページ:

505

終了ページ:

510

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991774 [1558991778]

言語:

英語

請求記号:

M23500/282

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015766
シリーズID:	PA00000011
会議名:	Symposium on chemical perspectives of microelectric materials
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.03

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