SINGLE CRYSTALLINE/POROUS AMORPHOUS SUPERLATTICE FORMATION BY THE ETCHING OF MBE GROWN Si/Si1-XGeX LAYERS ON Si SUBSTRATES

SINGLE CRYSTALLINE/POROUS AMORPHOUS SUPERLATTICE FORMATION BY THE ETCHING OF MBE GROWN Si/Si1-XGeX LAYERS ON Si SUBSTRATES

著者名:

掲載資料名:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

281

発行年:

1993

開始ページ:

507

終了ページ:

512

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

言語:

英語

請求記号:

M23500/281

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015765
シリーズID:	PA00000011
会議名:	Symposium on semiconductor heterostructures for photonic and electronic applications
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

類似資料:

1 国際会議録 POROUS AMORPHOUS Si FORMATION BY THE ETCHING OF SINGLE CRYSTAL Si SUBSTRATES George, T., Vasquez, R.P., Kim, S.S., Fathauer, R.W., Pike, W.T. Materials Research Society	7 国際会議録 SILICON-BASED LONG WAVELENGTH INFRARED DETECTORS FABRICATED BY MOLECULAR BEAM EPITAXY Lin, T.L., Jones, E.W., George, T., Ksendzov, A., Huberman, M.L. Materials Research Society
2 国際会議録 FABRICATION OF LUMINESCENT POROUS SILICON WITH STAIN ETCHES AND EVIDENCE THAT LUMINESCENCE ORIGINATES IN AMORPHOUS LAYERS Fathauer, R.W., George, T., Ksendzov, A., Lin, T.L., Pike, W.T., Vasquez, R.P., Wu, Z.-C. Materials Research Society	8 国際会議録 APPLICATION OF NOVEL EPITAXY TECHNIQUES TO THE GROWTH OF CrSi2 Fathauer, R. W., George, T., Jones, E. W., Pike, W. T., Short, K. T., Vasquez, R. P., White, Alice E., Wilkens, B. J. MRS - Materials Research Society
3 国際会議録 SUBSURFACE GROWTH OF CoSi2 BY DEPOSITION OF Co ON Si-CAPPED CoSi2 SEED REGIONS Fathauer, R.W., George, T., Pike, W.T. Materials Research Society	9 国際会議録 SELECTIVE GROWTH IN THE CoSi2/Si SYSTEM BY MOLECULAR BEAM EPITAXY George, T., Fathauer, R. W. Materials Research Society
4 国際会議録 SiGe/Si HETEROJUNCTION INTERNAL PHOTOEMISSION LONG-WAVELENGTH INFRARED DETECTORS Lin, T.L., Ksendzov, A., Dejewski, S.M., Jones, E.W., Fathauer, R.W., Krabach, T.N., Maserjian, J., Terhune, R.W. Materials Research Society	10 国際会議録 *MBE GROWTH OF EPITAXIAL CALCIUM FLUORIDE ON SILICON Schowalter, L.J., Fathauer, R.W. Materials Research Society
5 国際会議録 MICRODIFFRACTION FROM CLEAVED Si-Si1-x DOUBLE EPILAYERS ON (001) Si Pike, W.T. Materials Research Society	11 国際会議録 Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(OO1)Substrates Grown by Gas Source MBE Schmitt,J., Troffer,T., Christiansen,K., Christiansen,S., Helbig,R., Pensi,G., Strunk,H.P. Trans Tech Publications
6 国際会議録 ELECTRON MICRODIFFRACTION INVESTIGATION OF A GexSi1-x BUFFER FOR STRAIN-SYMMETRISED SUPERLATTICE STRUCTURES Pike, W.T., Kubiak, R.A.A., Parker, E..H.C., Whall, T.E. Materials Research Society	12 国際会議録 PHOTOLUMINESCENCE INVESTIGATIONS OF HIGH PURITY MBE-GROWN Si1-xGeX/Si SINGLE QUANTUM WELLS Wachter, M., Schaffler, F., Thonke, K., Sauer, R., Herzog, H.-J., Kasper, E. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12