THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGES ON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWN GeSi/Si

THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGES ON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWN GeSi/Si

著者名:

掲載資料名:

Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

281

発行年:

1993

開始ページ:

467

終了ページ:

472

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991767 [155899176X]

言語:

英語

請求記号:

M23500/281

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015765
シリーズID:	PA00000011
会議名:	Symposium on semiconductor heterostructures for photonic and electronic applications
回次:	1992
会議開催地:	Boston, MA, USA
会議開催年:	1992.11.30-1992.12.04

類似資料:

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2 国際会議録 ELECTRICAL AND OPTICAL PROPERTIES OF ERBIUM IN MBE SILICON AND Si/Ge ALLOYS Efeoglu, H., Evans, J.H., Langer, J.M., Peaker, A.R., Rowell, N.L., Noel, J.-P., Perovic, D.D., Jackman, T.E., Houghton, … Materials Research Society	8 国際会議録 PHOTOLUMINESCENCE OF THIN Si1-XGeX QUANTUM WELLS Lenchyshyn, L.C., Thewalt, M.L.W., Houghton, D.C., Noel, J.-P., Rowell, N.L., Sturm, J.C., Xiao, X. Materials Research Society
3 国際会議録 BROAD BAND VS PHONON RESOLVED LUMINESCENCE IN Si1-X GeX/Si HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY Houghton, D.C., Rowell, N.L., Noel, J.-P., Dion, M.M., McCaffrey, J., Davies, M., Wang, A., Perovic, D.D. Materials Research Society	9 国際会議録 Ge AND GeSi HETEROEPITAXY ON Si(100) BY MBE Houghton, D.C., Bariebeau, J.-M., Maigne, P., Jackman, T.E., Bassignana, I.C., Tan, C.C., Holt., R. Materials Research Society
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