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GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY

著者名:
Chin, T.P.
Chang, J.C.P.
Kavanagh, K.L.
Tu, C.W.
Kirchner, P.D.
Woodall, J.M.
さらに 1 件
掲載資料名:
Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
281
発行年:
1993
開始ページ:
227
終了ページ:
232
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991767 [155899176X]
言語:
英語
請求記号:
M23500/281
資料種別:
国際会議録

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